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| Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features * High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz * High Gain at 1 dB Compression: 12.5 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz * 35% Total Efficiency * Emitter Ballast Resistors * Hermetic, Metal/Beryllia Stripline Package Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. 230 mil BeO Package 4-183 5965-8916E AT-64023 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] 2.2 40 20 200 3 200 -65 to 200 Thermal Resistance [2,4]: jc = 40C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 25 mW/C for TC > 80C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications, TA = 25C Symbol |S21E|2 P1 dB G1 dB T hFE ICBO IEBO Parameters and Test Conditions Insertion Power Gain; VCE = 16 V, IC = 110 mA Power Output @ 1 dB Gain Compression VCE = 16 V, IC = 110 mA 1 dB Compressed Gain; VCE = 16 V, IC = 110 mA Total at 1 dB Compression: VCE = 16 V, IC = 110 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA Collector Cutoff Current; VCB = 16 V Emitter Cutoff Current; VEB = 1 V Efficiency[1] f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dBm 25.5 dB 7.0 % -- A A 20 Min. Typ. Max. 6.5 2.0 27.5 26.5 12.5 9.5 35.0 50 200 100 5.0 Note: 1. T = (RF Output Power)/(RF Input Power + VCE I C). 4-184 AT-64023 Typical Performance, TA = 25C 29 18 30 POUT 28 P1 dB (dBm) 25 POWER OUT (dBm) 15 150 mA 110 mA 20 15 10 5 G1 dB (dB) 27 T 40 30 20 10 0 EFFICIENCY (%) 12 150 mA 110 mA 70 mA 26 25 70 mA 9 24 1.0 2.0 3.0 4.0 6 1.0 0 2.0 3.0 4.0 0 5 10 15 20 25 FREQUENCY (GHz) POWER IN (dBm) FREQUENCY (GHz) Figure 1. Power Output @ 1 dB Gain Compression vs. Frequency and Collector Current. VCE = 16 V. Figure 2. 1 dB Compressed Gain vs. Frequency and Collector Current. VCE= 16 V. Figure 3. Output Power and Efficiency vs. Input Power. VCE = 16 V, IC = 110mA, f = 4.0 GHz. 35 30 25 GAIN (dB) 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 5.0 FREQUENCY (GHz) |S21E|2 MAG MSG Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 16 V, IC = 110 mA. Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 16 V, IC = 110 mA Freq. GHz 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Mag. .54 .80 .80 .80 .78 .77 .73 .66 .60 .55 .54 S11 Ang. -124 -178 162 147 133 127 116 106 99 98 99 dB 28.2 17.6 11.9 8.6 6.3 5.1 3.8 2.9 2.2 1.4 0.6 S21 Mag. 25.71 7.57 3.92 2.70 2.07 1.80 1.56 1.40 1.28 1.18 1.07 Ang. 135 78 47 21 -4 -24 -51 -79 -109 -141 -175 dB -33.3 -29.5 -28.6 -27.9 -27.6 -25.5 -25.0 -25.8 -27.2 -31.2 -40.9 S12 Mag. .022 .034 .037 .040 .042 .053 .056 .051 .044 .028 .009 S22 Ang. 42 18 10 12 1 -5 -20 -28 -49 -70 -144 Mag. .72 .33 .33 .40 .48 .58 .67 .78 .86 .93 .93 Ang. -51 -119 -142 -156 -169 -178 170 156 142 127 112 A model for this device is available in the DEVICE MODELS section. S-parameters at other bias conditions are available on the Hewlett-Packard Design Pak disk. 4-185 230 mil BeO Package Dimensions .725 .030 18.42 .76 4 .800 20.32 BASE .562 14.27 1 .120 3.05 .130 3.30 2 .230 5.84 .130 .010 3.30 .25 .004 .002 .10 .05 EMITTER Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 3. Base of package is electrically isolated. .060 1.52 EMITTER .050 1.27 COLLECTOR 3 4-186 |
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